SI1021R-T1-E3

Vishay Siliconix

SI1021R-T1-E3

Datasheet

Analog & Power

MOSFET P-CH 60V 190MA SC75A

ObsoleteSC-75, SOT-416Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs4Ohm @ 500mA, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs1.7 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds23 pF @ 25 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusObsolete
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 250µA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C190mA (Ta)
Max Power Dissipation250mW (Ta)

Mechanical

PackageTape & Reel (TR)
Package / CaseSC-75, SOT-416
Supplier Device PackageSC-75A

Environmental

Operating Temperature-55°C~150°C(TJ)