SI1012X-T1-E3

Vishay Siliconix

SI1012X-T1-E3

Datasheet

Analog & Power

MOSFET N-CH 20V 500MA SC89-3

ObsoleteSC-89, SOT-490Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs700mOhm @ 600mA, 4.5V
Base Product NumberSI1012
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs0.75 nC @ 4.5 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusObsolete
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±6V
Vgs(th) (Max) @ Id900mV @ 250µA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C500mA (Ta)
Max Power Dissipation250mW (Ta)

Mechanical

PackageTape & Reel (TR)
Package / CaseSC-89, SOT-490
Supplier Device PackageSC-89-3

Environmental

Operating Temperature-55°C~150°C(TJ)