SI1002R-T1-GE3

Vishay Siliconix

SI1002R-T1-GE3

Datasheet

Analog & Power

MOSFET N-CH 30V 610MA SC75A

ObsoleteSC-75AAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs560mOhm @ 500mA, 4.5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs2 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds36 pF @ 15 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id1V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C610mA (Ta)
Max Power Dissipation220mW (Ta)

Mechanical

PackageTape & Reel (TR)
Package / CaseSC-75A
Supplier Device PackageSC-75A

Environmental

Operating Temperature-55°C~150°C(TJ)