IRL520

Vishay Siliconix

IRL520

Analog & Power

MOSFET N-CH 100V 9.2A TO220AB

ObsoleteTO-220-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs270mOhm @ 5.5A, 5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds490 pF @ 25 V
ManufacturerVishay Siliconix
Mounting TypeThrough Hole
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±10V
Vgs(th) (Max) @ Id2V @ 250µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)4V, 5V
Current - Continuous Drain (Id) @ 25°C9.2A (Tc)
Max Power Dissipation60W (Tc)

Mechanical

PackageTube
Package / CaseTO-220-3
Supplier Device PackageTO-220AB

Environmental

Operating Temperature-55°C~175°C(TJ)