IRL510SPBF

Vishay Siliconix

IRL510SPBF

Datasheet

Analog & Power

MOSFET N-CH 100V 5.6A D2PAK

ActiveTO-263-3, D²Pak (2 Leads + Tab), TO-263ABAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs540mOhm @ 3.4A, 5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs6.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds250 pF @ 25 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±10V
Vgs(th) (Max) @ Id2V @ 250µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)4V, 5V
Current - Continuous Drain (Id) @ 25°C5.6A (Tc)
Max Power Dissipation3.7W (Ta), 43W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageD²PAK (TO-263)

Environmental

Operating Temperature-55°C~175°C(TJ)