Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 200mOhm @ 6A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 300 pF @ 25 V |
| Manufacturer | Vishay Siliconix |
| Mounting Type | Through Hole |
| Packaging | Tube |
| Part Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Drain-to-Source Voltage | 60 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Max Power Dissipation | 3.7W (Ta), 43W (Tc) |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
|---|---|
| Supplier Device Package | TO-262-3 |
| Operating Temperature | -55°C ~ 175°C (TJ) |
|---|