IRFR1N60APBF-BE3

Vishay Siliconix

IRFR1N60APBF-BE3

Datasheet

Analog & Power

MOSFET N-CH 600V 1.4A DPAK

ActiveTO-252-3, DPAK (2 Leads + Tab), SC-63Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs7Ohm @ 840mA, 10V
Base Product NumberIRFR1
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds229 pF @ 25 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
PackagingTube
Part StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage600 V
Current - Continuous Drain (Id) @ 25°C1.4A (Tc)
Max Power Dissipation36W (Tc)

Mechanical

Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device PackageTO-252AA

Environmental

Operating Temperature-55°C ~ 150°C (TJ)