Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 500mOhm @ 660mA, 10V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 270 pF @ 25 V |
| Manufacturer | Vishay Siliconix |
| Mounting Type | Through Hole |
| Product Status | Obsolete |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Drain-to-Source Voltage | 60 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 1.1A (Ta) |
| Max Power Dissipation | 1.3W (Ta) |
| Package | Tube |
|---|---|
| Package / Case | 4-DIP (0.300", 7.62mm) |
| Supplier Device Package | 4-HVMDIP |
| Operating Temperature | -55°C~175°C(TJ) |
|---|