Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 1.8Ohm @ 210mA, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 410 pF @ 25 V |
| Manufacturer | Vishay Siliconix |
| Mounting Type | Through Hole |
| Packaging | Tube |
| Part Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Drain-to-Source Voltage | 400 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 490mA (Ta) |
| Max Power Dissipation | 1W (Ta) |
| Package / Case | 4-DIP (0.300", 7.62mm) |
|---|---|
| Supplier Device Package | 4-HVMDIP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
|---|