IRC830PBF

Vishay Siliconix

IRC830PBF

Analog & Power

MOSFET N-CH 500V 4.5A TO220-5

ObsoleteTO-220-5Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs1.5Ohm @ 2.7A, 10V
FET FeatureCurrent Sensing
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds610 pF @ 25 V
ManufacturerVishay Siliconix
Mounting TypeThrough Hole
Product StatusObsolete
SeriesHEXFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage500 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C4.5A (Tc)
Max Power Dissipation74W (Tc)

Mechanical

PackageTube
Package / CaseTO-220-5
Supplier Device PackageTO-220-5

Environmental

Operating Temperature-55°C~150°C(TJ)