General
| Rds On (Max) @ Id, Vgs | 160mOhm @ 8.4A, 10V |
|---|---|
| FET Feature | Current Sensing |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 25 V |
| Manufacturer | Vishay Siliconix |
| Mounting Type | Through Hole |
| Packaging | Tube |
| Part Status | Obsolete |
| Series | HEXFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |