2N7002E-T1-GE3

Name: 2N7002E-T1-GE3
Brand: Vishay Siliconix

Analog & Power

MOSFET N-CH 60V 240MA TO236

DiscontinuedTO-236-3, SC-59, SOT-23-3Analog & Power

Structured electrical, mechanical and environmental parameters from imported product attributes.

Rds On (Max) @ Id, Vgs	3Ohm @ 250mA, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds	21 pF @ 5 V
Manufacturer	Vishay Siliconix
Mounting Type	Surface Mount
Packaging	Tape & Reel (TR) Cut Tape (CT)
Part Status	Last Time Buy
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.5V @ 250µA

Drain-to-Source Voltage	60 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	240mA (Ta)
Max Power Dissipation	350mW (Ta)

Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	TO-236

Operating Temperature	-55°C ~ 150°C (TJ)