Vishay General Semiconductor - Diodes Division
DIODE SCHOTT 100V 2.1A SLIMSMAW
Structured electrical, mechanical and environmental parameters from imported product attributes.
| Base Product Number | S8D3 |
|---|---|
| Capacitance @ Vr, F | 340pF @ 4V, 1MHz |
| Manufacturer | Vishay General Semiconductor - Diodes Division |
| Mounting Type | Surface Mount |
| Packaging | Tape & Reel (TR) Cut Tape (CT) |
| Part Status | Active |
| Series | eSMP®, TMBS® |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 550 mV @ 1.5 A |
| Current - Average Rectified (Io) | 2.1A |
| Current - Reverse Leakage @ Vr | 200 µA @ 100 V |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Package / Case | DO-221AC, SMA Flat Leads |
|---|---|
| Supplier Device Package | SlimSMAW (DO-221AD) |
| Operating Temperature - Junction | -40°C ~ 175°C |
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