Vishay General Semiconductor - Diodes Division
MODULES IGBT - IAP IGBT
Structured electrical, mechanical and environmental parameters from imported product attributes.
| Configuration | Half Bridge Inverter |
|---|---|
| IGBT Type | Trench Field Stop |
| Input | Standard |
| Manufacturer | Vishay General Semiconductor - Diodes Division |
| Mounting Type | Chassis Mount |
| NTC Thermistor | No |
| Product Status | Active |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 100A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
|---|---|
| Current - Collector (Ic) (Max) | 96 A |
| Current - Collector Cutoff (Max) | 50 µA |
| Power - Max | 259 W |
| Package | Box |
|---|---|
| Package / Case | Module |
| Supplier Device Package | INT-A-PAK IGBT |
| Operating Temperature | -40°C ~ 175°C (TJ) |
|---|