Vishay General Semiconductor - Diodes Division
MOSFET N-CH 500V 40A SOT-227
Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 130mOhm @ 23A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 420 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6900 pF @ 25 V |
| Manufacturer | Vishay General Semiconductor - Diodes Division |
| Mounting Type | Chassis Mount |
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Drain-to-Source Voltage | 500 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Max Power Dissipation | 543W (Tc) |
| Package | Bulk |
|---|---|
| Package / Case | SOT-227-4, miniBLOC |
| Supplier Device Package | SOT-227 |
| Operating Temperature | -55°C~150°C(TJ) |
|---|