VS-E5TH3012S2L-M3

Vishay General Semiconductor - Diodes Division

VS-E5TH3012S2L-M3

Datasheet

Analog & Power

DIODE GEN PURP 1.2KV 30A TO263AB

ActiveAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

ManufacturerVishay General Semiconductor - Diodes Division
Mounting TypeSurface Mount
Product StatusActive
Reverse Recovery Time (trr)113 ns
SeriesFRED Pt® G5
TechnologyStandard

Electrical

Voltage - DC Reverse (Vr) (Max)1200 V
Voltage - Forward (Vf) (Max) @ If2.5 V @ 30 A
Current - Average Rectified (Io)30A
Current - Reverse Leakage @ Vr50 µA @ 1200 V
SpeedFast Recovery =< 500ns, > 200mA (Io)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Supplier Device PackageTO-263AB (D2PAK)

Environmental

Operating Temperature - Junction-55°C ~ 175°C