General
| Base Product Number | 8EWS12 |
|---|---|
| Manufacturer | Vishay General Semiconductor - Diodes Division |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Technology | Standard |
Vishay General Semiconductor - Diodes Division
VS-8EWS12S-M3
DatasheetAnalog & Power
DIODE GEN PURP 1.2KV 8A DPAK
Technical Specifications
Structured electrical, mechanical and environmental parameters from imported product attributes.
Electrical
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 8 A |
| Current - Average Rectified (Io) | 8A |
| Current - Reverse Leakage @ Vr | 50 µA @ 1200 V |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Mechanical
| Package | Tube |
|---|---|
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | TO-252AA (DPAK) |
Environmental
| Operating Temperature - Junction | -55°C ~ 150°C |
|---|