General
| Base Product Number | 20ETF10 |
|---|---|
| Manufacturer | Vishay General Semiconductor - Diodes Division |
| Mounting Type | Through Hole |
| Product Status | Active |
| Reverse Recovery Time (trr) | 95 ns |
| Technology | Standard |
Vishay General Semiconductor - Diodes Division
VS-20ETF10-M3
DatasheetAnalog & Power
DIODE GEN PURP 1KV 20A TO220AC
Technical Specifications
Structured electrical, mechanical and environmental parameters from imported product attributes.
Electrical
| Voltage - DC Reverse (Vr) (Max) | 1000 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 20 A |
| Current - Average Rectified (Io) | 20A |
| Current - Reverse Leakage @ Vr | 100 µA @ 1000 V |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Mechanical
| Package | Tube |
|---|---|
| Package / Case | TO-220-2 |
| Supplier Device Package | TO-220AC |
Environmental
| Operating Temperature - Junction | -40°C ~ 150°C |
|---|