General
| Base Product Number | 123NQ100 |
|---|---|
| Capacitance @ Vr, F | 2650pF @ 5V, 1MHz |
| Manufacturer | Vishay General Semiconductor - Diodes Division |
| Mounting Type | Chassis Mount |
| Product Status | Active |
| Technology | Schottky |
Vishay General Semiconductor - Diodes Division
VS-123NQ100PBF
DatasheetAnalog & Power
DIODE SCHOTTKY 100V 120A D-67
Technical Specifications
Structured electrical, mechanical and environmental parameters from imported product attributes.
Electrical
| Voltage - DC Reverse (Vr) (Max) | 100 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 910 mV @ 120 A |
| Current - Average Rectified (Io) | 120A |
| Current - Reverse Leakage @ Vr | 3 mA @ 100 V |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Mechanical
| Package | Bulk |
|---|---|
| Package / Case | D-67 HALF-PAK |
| Supplier Device Package | D-67 HALF-PAK |
Environmental
| Operating Temperature - Junction | -55°C ~ 175°C |
|---|