General
| Base Product Number | 10ETS08 |
|---|---|
| Manufacturer | Vishay General Semiconductor - Diodes Division |
| Mounting Type | Through Hole |
| Product Status | Active |
| Technology | Standard |
Vishay General Semiconductor - Diodes Division
VS-10ETS08-M3
DatasheetAnalog & Power
DIODE GEN PURP 800V 10A TO220AC
Technical Specifications
Structured electrical, mechanical and environmental parameters from imported product attributes.
Electrical
| Voltage - DC Reverse (Vr) (Max) | 800 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 10 A |
| Current - Average Rectified (Io) | 10A |
| Current - Reverse Leakage @ Vr | 50 µA @ 800 V |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Mechanical
| Package | Tube |
|---|---|
| Package / Case | TO-220-2 |
| Supplier Device Package | TO-220AC |
Environmental
| Operating Temperature - Junction | -40°C ~ 150°C |
|---|