General
| Base Product Number | 10ETF12 |
|---|---|
| Manufacturer | Vishay General Semiconductor - Diodes Division |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Reverse Recovery Time (trr) | 310 ns |
| Technology | Standard |
Vishay General Semiconductor - Diodes Division
VS-10ETF12SLHM3
DatasheetAnalog & Power
DIODE GEN PURP 1.2KV 10A TO263AB
Technical Specifications
Structured electrical, mechanical and environmental parameters from imported product attributes.
Electrical
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 1.33 V @ 10 A |
| Current - Average Rectified (Io) | 10A |
| Current - Reverse Leakage @ Vr | 100 µA @ 1200 V |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Mechanical
| Package | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Supplier Device Package | TO-263AB (D2PAK) |
Environmental
| Grade | Automotive |
|---|---|
| Operating Temperature - Junction | -40°C ~ 150°C |
| Qualification | AEC-Q101 |