General
| Base Product Number | V20120 |
|---|---|
| Manufacturer | Vishay General Semiconductor - Diodes Division |
| Mounting Type | Through Hole |
| Packaging | Tube |
| Part Status | Active |
| Series | TMBS® |
| Technology | Schottky |
Vishay General Semiconductor - Diodes Division
V20120S-E3/4W
DatasheetAnalog & Power
DIODE SCHOTTKY 120V 20A TO220-3
Technical Specifications
Structured electrical, mechanical and environmental parameters from imported product attributes.
Electrical
| Voltage - DC Reverse (Vr) (Max) | 120 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 1.12 V @ 20 A |
| Current - Average Rectified (Io) | 20A |
| Current - Reverse Leakage @ Vr | 300 µA @ 120 V |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Mechanical
| Package / Case | TO-220-3 |
|---|---|
| Supplier Device Package | TO-220-3 |
Environmental
| Operating Temperature - Junction | -40°C ~ 150°C |
|---|