General
| Base Product Number | V1F6 |
|---|---|
| Capacitance @ Vr, F | 135pF @ 4V, 1MHz |
| Manufacturer | Vishay General Semiconductor - Diodes Division |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Series | eSMP®, TMBS® |
| Technology | Schottky |
Vishay General Semiconductor - Diodes Division
V1F6-M3/I
DatasheetAnalog & Power
DIODE SCHOTTKY 60V 1A DO219AB
Technical Specifications
Structured electrical, mechanical and environmental parameters from imported product attributes.
Electrical
| Voltage - DC Reverse (Vr) (Max) | 60 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 600 mV @ 1 A |
| Current - Average Rectified (Io) | 1A |
| Current - Reverse Leakage @ Vr | 270 µA @ 60 V |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Mechanical
| Package | Tape & Reel (TR) |
|---|---|
| Package / Case | DO-219AB |
| Supplier Device Package | DO-219AB (SMF) |
Environmental
| Operating Temperature - Junction | -40°C ~ 150°C |
|---|