US1D-E3/61T

Vishay General Semiconductor - Diodes Division

US1D-E3/61T

Datasheet

Analog & Power

DIODE GEN PURP 200V 1A DO214AC

ActiveDO-214AC, SMAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Base Product NumberUS1D
Capacitance @ Vr, F15pF @ 4V, 1MHz
ManufacturerVishay General Semiconductor - Diodes Division
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
Reverse Recovery Time (trr)50 ns
TechnologyStandard

Electrical

Voltage - DC Reverse (Vr) (Max)200 V
Voltage - Forward (Vf) (Max) @ If1 V @ 1 A
Current - Average Rectified (Io)1A
Current - Reverse Leakage @ Vr10 µA @ 200 V
SpeedFast Recovery =< 500ns, > 200mA (Io)

Mechanical

Package / CaseDO-214AC, SMA
Supplier Device PackageDO-214AC (SMA)

Environmental

Operating Temperature - Junction-55°C ~ 150°C