SE50PAJ-M3/I

Vishay General Semiconductor - Diodes Division

SE50PAJ-M3/I

Datasheet

Analog & Power

DIODE GEN PURP 600V 5A DO221BC

ActiveDO-221BC, SMA Flat Leads Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Base Product NumberSE50
Capacitance @ Vr, F32pF @ 4V, 1MHz
ManufacturerVishay General Semiconductor - Diodes Division
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
Reverse Recovery Time (trr)2 µs
TechnologyStandard

Electrical

Voltage - DC Reverse (Vr) (Max)600 V
Voltage - Forward (Vf) (Max) @ If940 mV @ 2.5 A
Current - Average Rectified (Io)5A
Current - Reverse Leakage @ Vr10 µA @ 600 V
SpeedStandard Recovery >500ns, > 200mA (Io)

Mechanical

Package / CaseDO-221BC, SMA Flat Leads Exposed Pad
Supplier Device PackageDO-221BC (SMPA)

Environmental

Operating Temperature - Junction-55°C ~ 175°C