General
| Capacitance @ Vr, F | 24pF @ 4V, 1MHz |
|---|---|
| Manufacturer | Vishay General Semiconductor - Diodes Division |
| Mounting Type | Surface Mount, Wettable Flank |
| Product Status | Active |
| Reverse Recovery Time (trr) | 1.2 µs |
| Technology | Standard |
Vishay General Semiconductor - Diodes Division
SE40NDHM3/I
DatasheetAnalog & Power
DIODE GEN PURP 200V 4A DFN3820A
Technical Specifications
Structured electrical, mechanical and environmental parameters from imported product attributes.
Electrical
| Voltage - DC Reverse (Vr) (Max) | 200 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 4 A |
| Current - Average Rectified (Io) | 4A |
| Current - Reverse Leakage @ Vr | 10 µA @ 200 V |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
Mechanical
| Package | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | 2-VDFN |
| Supplier Device Package | DFN3820A |
Environmental
| Grade | Automotive |
|---|---|
| Operating Temperature - Junction | -55°C ~ 175°C |
| Qualification | AEC-Q101 |