SE30PAGHM3/I

Vishay General Semiconductor - Diodes Division

SE30PAGHM3/I

Datasheet

Analog & Power

DIODE GEN PURP 400V 3A DO221BC

ActiveDO-221BC, SMA Flat Leads Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Base Product NumberSE30
Capacitance @ Vr, F13pF @ 4V, 1MHz
ManufacturerVishay General Semiconductor - Diodes Division
Mounting TypeSurface Mount
PackagingTape & Reel (TR)
Part StatusActive
Reverse Recovery Time (trr)1.3 µs
SerieseSMP®
TechnologyStandard

Electrical

Voltage - DC Reverse (Vr) (Max)400 V
Voltage - Forward (Vf) (Max) @ If1.16 V @ 3 A
Current - Average Rectified (Io)3A
Current - Reverse Leakage @ Vr5 µA @ 400 V
SpeedStandard Recovery >500ns, > 200mA (Io)

Mechanical

Package / CaseDO-221BC, SMA Flat Leads Exposed Pad
Supplier Device PackageDO-221BC (SMPA)

Environmental

GradeAutomotive
Operating Temperature - Junction-55°C ~ 175°C
QualificationAEC-Q101