Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1.2KV 30A SMPD
Structured electrical, mechanical and environmental parameters from imported product attributes.
| Base Product Number | SE30DT12 |
|---|---|
| Capacitance @ Vr, F | 132pF @ 4V, 1MHz |
| Manufacturer | Vishay General Semiconductor - Diodes Division |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Reverse Recovery Time (trr) | 3.4 µs |
| Series | eSMP® |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 1.29 V @ 30 A |
| Current - Average Rectified (Io) | 30A |
| Current - Reverse Leakage @ Vr | 10 µA @ 1200 V |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Package | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Supplier Device Package | SMPD |
| Grade | Automotive |
|---|---|
| Operating Temperature - Junction | -55°C ~ 175°C |
| Qualification | AEC-Q101 |