S8M-E3/I

Vishay General Semiconductor - Diodes Division

S8M-E3/I

Datasheet

Analog & Power

8A, 1000V, STD RECT , SMC

ActiveDO-214AB, SMCAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Base Product NumberS8M
Capacitance @ Vr, F72pF @ 4V, 1MHz
ManufacturerVishay General Semiconductor - Diodes Division
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
Reverse Recovery Time (trr)3.6 µs
TechnologyStandard

Electrical

Voltage - DC Reverse (Vr) (Max)1000 V
Voltage - Forward (Vf) (Max) @ If975 mV @ 8 A
Current - Average Rectified (Io)8A
Current - Reverse Leakage @ Vr10 µA @ 1000 V
SpeedStandard Recovery > 500ns, > 1A (Io)

Mechanical

Package / CaseDO-214AB, SMC
Supplier Device PackageDO-214AB (SMC)

Environmental

Operating Temperature - Junction-55°C ~ 150°C