Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 8A DO214AB
Structured electrical, mechanical and environmental parameters from imported product attributes.
| Base Product Number | S8CJ |
|---|---|
| Capacitance @ Vr, F | 79pF @ 4V, 1MHz |
| Manufacturer | Vishay General Semiconductor - Diodes Division |
| Mounting Type | Surface Mount |
| Packaging | Tape & Reel (TR) Cut Tape (CT) |
| Part Status | Active |
| Reverse Recovery Time (trr) | 4 µs |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 985 mV @ 8 A |
| Current - Average Rectified (Io) | 8A |
| Current - Reverse Leakage @ Vr | 10 µA @ 600 V |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Package / Case | DO-214AB, SMC |
|---|---|
| Supplier Device Package | DO-214AB (SMC) |
| Grade | Automotive |
|---|---|
| Operating Temperature - Junction | -55°C ~ 150°C |
| Qualification | AEC-Q101 |