General
| Base Product Number | S07 |
|---|---|
| Capacitance @ Vr, F | 4pF @ 4V, 1MHz |
| Manufacturer | Vishay General Semiconductor - Diodes Division |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Reverse Recovery Time (trr) | 1.8 µs |
| Technology | Standard |
Vishay General Semiconductor - Diodes Division
S07M-GS08
DatasheetAnalog & Power
DIODE GEN PURP 1KV 1.5A DO219AB
Technical Specifications
Structured electrical, mechanical and environmental parameters from imported product attributes.
Electrical
| Voltage - DC Reverse (Vr) (Max) | 1000 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 1 A |
| Current - Average Rectified (Io) | 1.5A |
| Current - Reverse Leakage @ Vr | 10 µA @ 1000 V |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
Mechanical
| Package | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | DO-219AB |
| Supplier Device Package | DO-219AB (SMF) |
Environmental
| Operating Temperature - Junction | -55°C ~ 150°C |
|---|