General
| Base Product Number | FESB16 |
|---|---|
| Capacitance @ Vr, F | 175pF @ 4V, 1MHz |
| Manufacturer | Vishay General Semiconductor - Diodes Division |
| Mounting Type | Surface Mount |
| Product Status | Last Time Buy |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard |
Vishay General Semiconductor - Diodes Division
FESB16DT-E3/45
DatasheetAnalog & Power
DIODE GEN PURP 200V 16A TO263AB
Technical Specifications
Structured electrical, mechanical and environmental parameters from imported product attributes.
Electrical
| Voltage - DC Reverse (Vr) (Max) | 200 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 975 mV @ 16 A |
| Current - Average Rectified (Io) | 16A |
| Current - Reverse Leakage @ Vr | 10 µA @ 200 V |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Mechanical
| Package | Tube |
|---|---|
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Supplier Device Package | TO-263AB (D2PAK) |
Environmental
| Operating Temperature - Junction | -65°C ~ 150°C |
|---|