General
| Capacitance @ Vr, F | 8pF @ 4V, 1MHz |
|---|---|
| Manufacturer | Vishay General Semiconductor - Diodes Division |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Reverse Recovery Time (trr) | 75 ns |
| Series | Superectifier® |
| Technology | Standard |
Vishay General Semiconductor - Diodes Division
EGF1THE3_A/I
DatasheetAnalog & Power
DIODE GEN PURP 1.3KV 1A DO214BA
Technical Specifications
Structured electrical, mechanical and environmental parameters from imported product attributes.
Electrical
| Voltage - DC Reverse (Vr) (Max) | 1300 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 3 V @ 1 A |
| Current - Average Rectified (Io) | 1A |
| Current - Reverse Leakage @ Vr | 5 µA @ 1300 V |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Mechanical
| Package | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | DO-214BA |
| Supplier Device Package | DO-214BA (GF1) |
Environmental
| Grade | Automotive |
|---|---|
| Operating Temperature - Junction | -55°C ~ 150°C |
| Qualification | AEC-Q101 |