EGF1C-E3/67A

Vishay General Semiconductor - Diodes Division

EGF1C-E3/67A

Datasheet

Analog & Power

DIODE GEN PURP 150V 1A DO214BA

ActiveDO-214BAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Base Product NumberEGF1
Capacitance @ Vr, F15pF @ 4V, 1MHz
ManufacturerVishay General Semiconductor - Diodes Division
Mounting TypeSurface Mount
PackagingTape & Reel (TR)
Part StatusActive
Reverse Recovery Time (trr)50 ns
SeriesSUPERECTIFIER®
TechnologyStandard

Electrical

Voltage - DC Reverse (Vr) (Max)150 V
Voltage - Forward (Vf) (Max) @ If1 V @ 1 A
Current - Average Rectified (Io)1A
Current - Reverse Leakage @ Vr5 µA @ 150 V
SpeedFast Recovery =< 500ns, > 200mA (Io)

Mechanical

Package / CaseDO-214BA
Supplier Device PackageDO-214BA (GF1)

Environmental

Operating Temperature - Junction-65°C ~ 175°C