Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO213AB
Structured electrical, mechanical and environmental parameters from imported product attributes.
| Base Product Number | BYM11 |
|---|---|
| Capacitance @ Vr, F | 15pF @ 4V, 1MHz |
| Manufacturer | Vishay General Semiconductor - Diodes Division |
| Mounting Type | Surface Mount |
| Packaging | Tape & Reel (TR) Cut Tape (CT) |
| Part Status | Active |
| Reverse Recovery Time (trr) | 500 ns |
| Series | SUPERECTIFIER® |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 1000 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 1 A |
| Current - Average Rectified (Io) | 1A |
| Current - Reverse Leakage @ Vr | 5 µA @ 1000 V |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Package / Case | DO-213AB, MELF (Glass) |
|---|---|
| Supplier Device Package | DO-213AB |
| Operating Temperature - Junction | -65°C ~ 175°C |
|---|