General
| Base Product Number | BAS386 |
|---|---|
| Capacitance @ Vr, F | 8pF @ 1V, 1MHz |
| Manufacturer | Vishay General Semiconductor - Diodes Division |
| Mounting Type | Surface Mount |
| Packaging | Tape & Reel (TR) Cut Tape (CT) |
| Part Status | Active |
| Technology | Schottky |
Vishay General Semiconductor - Diodes Division
BAS386-TR3
DatasheetAnalog & Power
DIODE SCHOTT 50V 200MA MICROMELF
Technical Specifications
Structured electrical, mechanical and environmental parameters from imported product attributes.
Electrical
| Voltage - DC Reverse (Vr) (Max) | 50 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 900 mV @ 100 mA |
| Current - Average Rectified (Io) | 200mA |
| Current - Reverse Leakage @ Vr | 5 µA @ 40 V |
| Speed | Small Signal =< 200mA (Io), Any Speed |
Mechanical
| Package / Case | 2-SMD, No Lead |
|---|---|
| Supplier Device Package | MicroMELF |
Environmental
| Grade | Automotive |
|---|---|
| Operating Temperature - Junction | -65°C ~ 150°C |
| Qualification | AEC-Q101 |