Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 600V 2.1A TO277A
Structured electrical, mechanical and environmental parameters from imported product attributes.
| Base Product Number | AS3 |
|---|---|
| Capacitance @ Vr, F | 37pF @ 4V, 1MHz |
| Manufacturer | Vishay General Semiconductor - Diodes Division |
| Mounting Type | Surface Mount |
| Packaging | Tape & Reel (TR) |
| Part Status | Discontinued at |
| Reverse Recovery Time (trr) | 1.2 µs |
| Series | eSMP® |
| Technology | Avalanche |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 920 mV @ 1.5 A |
| Current - Average Rectified (Io) | 2.1A |
| Current - Reverse Leakage @ Vr | 10 µA @ 600 V |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Package / Case | TO-277, 3-PowerDFN |
|---|---|
| Supplier Device Package | TO-277A (SMPC) |
| Grade | Automotive |
|---|---|
| Operating Temperature - Junction | -55°C ~ 175°C |
| Qualification | AEC-Q101 |