Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 300MA DO35
Structured electrical, mechanical and environmental parameters from imported product attributes.
| Base Product Number | 1N914 |
|---|---|
| Capacitance @ Vr, F | 4pF @ 0V, 1MHz |
| Manufacturer | Vishay General Semiconductor - Diodes Division |
| Mounting Type | Through Hole |
| Packaging | Cut Tape (CT) Tape & Box (TB) |
| Part Status | Active |
| Reverse Recovery Time (trr) | 4 ns |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 10 mA |
| Current - Average Rectified (Io) | 300mA |
| Current - Reverse Leakage @ Vr | 5 µA @ 75 V |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Package / Case | DO-204AH, DO-35, Axial |
|---|---|
| Supplier Device Package | DO-204AH (DO-35) |
| Grade | Automotive |
|---|---|
| Operating Temperature - Junction | -65°C ~ 175°C |
| Qualification | AEC-Q101 |