General
| Base Product Number | 1N5625 |
|---|---|
| Capacitance @ Vr, F | 60pF @ 4V, 1MHz |
| Manufacturer | Vishay General Semiconductor - Diodes Division |
| Mounting Type | Through Hole |
| Product Status | Active |
| Reverse Recovery Time (trr) | 7.5 µs |
| Technology | Avalanche |
Vishay General Semiconductor - Diodes Division
1N5625-TAP
DatasheetAnalog & Power
DIODE AVALANCHE 400V 3A SOD64
Technical Specifications
Structured electrical, mechanical and environmental parameters from imported product attributes.
Electrical
| Voltage - DC Reverse (Vr) (Max) | 400 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 3 A |
| Current - Average Rectified (Io) | 3A |
| Current - Reverse Leakage @ Vr | 1 µA @ 200 V |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
Mechanical
| Package | Cut Tape (CT) Tape & Box (TB) |
|---|---|
| Package / Case | SOD-64, Axial |
| Supplier Device Package | SOD-64 |
Environmental
| Operating Temperature - Junction | -55°C ~ 175°C |
|---|