General
| Base Product Number | 1N5401 |
|---|---|
| Capacitance @ Vr, F | 30pF @ 4V, 1MHz |
| Manufacturer | Vishay General Semiconductor - Diodes Division |
| Mounting Type | Through Hole |
| Packaging | Cut Tape (CT) Tape & Box (TB) |
| Part Status | Active |
| Technology | Standard |
Vishay General Semiconductor - Diodes Division
1N5401-E3/73
DatasheetAnalog & Power
DIODE GEN PURP 100V 3A DO201AD
Technical Specifications
Structured electrical, mechanical and environmental parameters from imported product attributes.
Electrical
| Voltage - DC Reverse (Vr) (Max) | 100 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 1.2 V @ 3 A |
| Current - Average Rectified (Io) | 3A |
| Current - Reverse Leakage @ Vr | 5 µA @ 100 V |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
Mechanical
| Package / Case | DO-201AD, Axial |
|---|---|
| Supplier Device Package | DO-201AD |
Environmental
| Operating Temperature - Junction | -50°C ~ 150°C |
|---|