Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 200V 2A SOD57
Structured electrical, mechanical and environmental parameters from imported product attributes.
| Base Product Number | 1N5059 |
|---|---|
| Capacitance @ Vr, F | 40pF @ 0V, 1MHz |
| Manufacturer | Vishay General Semiconductor - Diodes Division |
| Mounting Type | Through Hole |
| Packaging | Tape & Box (TB) |
| Part Status | Active |
| Reverse Recovery Time (trr) | 4 µs |
| Technology | Avalanche |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 1.15 V @ 2.5 A |
| Current - Average Rectified (Io) | 2A |
| Current - Reverse Leakage @ Vr | 1 µA @ 200 V |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Package / Case | SOD-57, Axial |
|---|---|
| Supplier Device Package | SOD-57 |
| Operating Temperature - Junction | -55°C ~ 175°C |
|---|