SI2304A

UMW

SI2304A

Analog & Power

SOT-23 N-CHANNEL POWER MOSFETS R

ActiveTO-236-3, SC-59, SOT-23-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs35mOhm @ 3.5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds555 pF @ 15 V
ManufacturerUMW
Mounting TypeSurface Mount
Product StatusActive
SeriesUMW
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C3.6A (Ta)
Max Power Dissipation1.25W (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23

Environmental

Operating Temperature150°C (TJ)