TPH3205WSBQA

Transphorm

TPH3205WSBQA

Datasheet

Analog & Power

GANFET N-CH 650V 35A TO247-3

DiscontinuedTO-247-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs62mOhm @ 22A, 8V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs42 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds2200 pF @ 400 V
ManufacturerTransphorm
Mounting TypeThrough Hole
Product StatusNot For New Designs
SeriesAutomotive, AEC-Q101
TechnologyGaNFET (Gallium Nitride)
Vgs (Max)±18V
Vgs(th) (Max) @ Id2.6V @ 700µA

Electrical

Drain-to-Source Voltage650 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Max Power Dissipation125W (Tc)

Mechanical

PackageTube
Package / CaseTO-247-3
Supplier Device PackageTO-247-3

Environmental

Operating Temperature-55°C~150°C(TJ)