TP65H070LSG

Transphorm

TP65H070LSG

Datasheet

Analog & Power

GANFET N-CH 650V 25A 3PQFN

Discontinued3-PowerDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs85mOhm @ 16A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds600 pF @ 400 V
ManufacturerTransphorm
Mounting TypeSurface Mount
PackagingTube
Part StatusDiscontinued at
SeriesTP65H070L
TechnologyGaNFET (Cascode Gallium Nitride FET)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4.8V @ 700µA

Electrical

Drain-to-Source Voltage650 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C25A (Tc)
Max Power Dissipation96W (Tc)

Mechanical

Package / Case3-PowerDFN
Supplier Device Package3-PQFN (8x8)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)