TP65H050WSQA

Transphorm

TP65H050WSQA

Datasheet

Analog & Power

GANFET N-CH 650V 36A TO247-3

ActiveTO-247-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs60mOhm @ 25A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1000 pF @ 400 V
ManufacturerTransphorm
Mounting TypeThrough Hole
Product StatusActive
SeriesAutomotive, AEC-Q101
TechnologyGaNFET (Cascode Gallium Nitride FET)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4.8V @ 700µA

Electrical

Drain-to-Source Voltage650 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C36A (Tc)
Max Power Dissipation150W (Tc)

Mechanical

PackageTube
Package / CaseTO-247-3
Supplier Device PackageTO-247-3

Environmental

Operating Temperature-55°C~175°C(TJ)