TP65H035WSQA

Transphorm

TP65H035WSQA

Datasheet

Analog & Power

GANFET N-CH 650V 47.2A TO247-3

ActiveTO-247-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs41mOhm @ 32A, 10V
Base Product NumberTP65H035
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1500 pF @ 400 V
ManufacturerTransphorm
Mounting TypeThrough Hole
Product StatusActive
SeriesAutomotive, AEC-Q101
TechnologyGaNFET (Cascode Gallium Nitride FET)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4.5V @ 1mA

Electrical

Drain-to-Source Voltage650 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C47.2A (Tc)
Max Power Dissipation187W (Tc)

Mechanical

PackageTube
Package / CaseTO-247-3
Supplier Device PackageTO-247-3

Environmental

Operating Temperature-55°C~175°C(TJ)