XPH3R206NC,L1XHQ

Toshiba Semiconductor and Storage

XPH3R206NC,L1XHQ

Datasheet

Analog & Power

MOSFET N-CH 60V 70A 8SOP

Active8-SOIC (0.197", 5.00mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs3.2mOhm @ 35A, 10V
Base Product NumberXPH3R206
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4180 pF @ 10 V
ManufacturerToshiba Semiconductor and Storage
Mounting TypeSurface Mount
Product StatusActive
SeriesAutomotive, AEC-Q101, U-MOSVIII-H
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 500µA

Electrical

Drain-to-Source Voltage60 V
Current - Continuous Drain (Id) @ 25°C70A (Ta)
Max Power Dissipation960mW (Ta), 132W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-SOIC (0.197", 5.00mm Width)
Supplier Device Package8-SOP Advance (5x5)

Environmental

Operating Temperature175°C