XPH2R106NC,L1XHQ

Name: XPH2R106NC,L1XHQ
Brand: Toshiba Semiconductor and Storage

Analog & Power

MOSFET N-CH 60V 110A 8SOP

Active8-SOIC (0.197", 5.00mm Width)Analog & Power

Structured electrical, mechanical and environmental parameters from imported product attributes.

Rds On (Max) @ Id, Vgs	2.1mOhm @ 55A, 10V
Base Product Number	XPH2R106
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	6900 pF @ 10 V
Manufacturer	Toshiba Semiconductor and Storage
Mounting Type	Surface Mount
Product Status	Active
Series	Automotive, AEC-Q101, U-MOSVIII-H
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.5V @ 1mA

Drain-to-Source Voltage	60 V
Current - Continuous Drain (Id) @ 25°C	110A (Ta)
Max Power Dissipation	960mW (Ta), 170W (Tc)

Operating Temperature	175°C