General
| Base Product Number | ULN2803 |
|---|---|
| Manufacturer | Toshiba Semiconductor and Storage |
| Mounting Type | Through Hole |
| Product Status | Obsolete |
| Transistor Type | 8 NPN Darlington |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 500µA, 350mA |
Technical Specifications
Structured electrical, mechanical and environmental parameters from imported product attributes.
Electrical
| Voltage - Collector Emitter Breakdown (Max) | 50V |
|---|---|
| Current - Collector (Ic) (Max) | 500mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 350mA, 2V |
| Power - Max | 1.47W |
Mechanical
| Package | Tube |
|---|---|
| Package / Case | 18-DIP (0.300", 7.62mm) |
| Supplier Device Package | 18-DIP |
Environmental
| Operating Temperature | -40°C ~ 85°C (TA) |
|---|