TW070J120B,S1Q

Name: TW070J120B,S1Q
Brand: Toshiba Semiconductor and Storage

Analog & Power

SICFET N-CH 1200V 36A TO3P

ActiveTO-3P-3, SC-65-3Analog & Power

Structured electrical, mechanical and environmental parameters from imported product attributes.

Rds On (Max) @ Id, Vgs	90mOhm @ 18A, 20V
FET Feature	Standard
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	67 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds	1680 pF @ 800 V
Manufacturer	Toshiba Semiconductor and Storage
Mounting Type	Through Hole
Product Status	Active
Technology	SiCFET (Silicon Carbide)
Vgs (Max)	±25V, -10V
Vgs(th) (Max) @ Id	5.8V @ 20mA

Drain-to-Source Voltage	1200 V
Drive Voltage (Max Rds On, Min Rds On)	20V
Current - Continuous Drain (Id) @ 25°C	36A (Tc)
Max Power Dissipation	272W (Tc)

Operating Temperature	-55°C~175°C